The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Mar. 29, 2011
Shibly S. Ahmed, San Jose, CA (US);
Jun Kang, San Jose, CA (US);
Hsiao-han Thio, Santa Clara, CA (US);
Imran Khan, Santa Clara, CA (US);
Dong-hyuk Ju, Cupertino, CA (US);
Chuan Lin, Sunnyvale, CA (US);
Shibly S. Ahmed, San Jose, CA (US);
Jun Kang, San Jose, CA (US);
Hsiao-Han Thio, Santa Clara, CA (US);
Imran Khan, Santa Clara, CA (US);
Dong-Hyuk Ju, Cupertino, CA (US);
Chuan Lin, Sunnyvale, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted prior to the arsenic. The memory device also includes a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may further include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer.