The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Oct. 10, 2006
Kai Schumacher, Hofheim, DE;
Rainer Golchert, Dieburg, DE;
Helmut Roth, Mainaschaff, DE;
Harald Alff, Kahl, DE;
Matthias Rochnia, Ortenberg-Bleichenbach, DE;
Kai Schumacher, Hofheim, DE;
Rainer Golchert, Dieburg, DE;
Helmut Roth, Mainaschaff, DE;
Harald Alff, Kahl, DE;
Matthias Rochnia, Ortenberg-Bleichenbach, DE;
Evonik Degussa GmbH, Essen, DE;
Abstract
Process for the production of doped metal oxide particles, wherein the doping component is present on the surface in the form of domains, wherein in a first reaction zone, an oxidizable and/or —hydrolysable metal compound as dopant together with an atomization gas is atomized into a flow of metal oxide particles in a carrier gas, wherein the mass flow of the metal oxide particles und —the mass flow of the dopant are selected such that the doped metal oxide particles contain 10 ppm to 10 wt. % of the doping component, where the quantity of dopant to be introduced is calculated as the corresponding oxide, and wherein the temperature in the first reaction zone is —selected such that it is below the boiling temperature of the dopant under the prevailing reaction conditions, and then, in a second reaction zone, the flow from the first —reaction zone and optionally at least as much oxygen and/or steam are —introduced that the quantity of oxygen and/or steam at least suffices completely to convert the dopant, wherein the temperature is from 300 to 2000° C., —preferably 500 to 1000° C., and the reaction mixture is then cooled or allowed to cool and the doped metal oxide particles are separated from the gaseous substances.