The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Sep. 26, 2008
Applicants:
Takefumi Suzuki, Tokyo, JP;
Tatsuya Sugimoto, Tokyo, JP;
Masahiro Nakamura, Tokyo, JP;
Inventors:
Assignee:
Zeon Corporation, Chiyoda-Ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A plasma etching method includes plasma-etching a silicon oxide layer through a mask using a process gas, the process gas containing oxygen gas and a fluorohydrocarbon shown by the formula (1), CxHyFz, wherein x is an integer from 4 to 6, y is an integer from 1 to 4, and z is a positive integer, provided that (y+z) is 2x or less. A contact hole having a very small diameter and a high aspect ratio can be formed in a substantially vertical shape without necking by plasma-etching the silicon oxide layer using a single process gas.