The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Jul. 16, 2010
Applicant:
Yong Dae Kim, Chungcheongnam-do, KR;
Inventor:
Yong Dae Kim, Chungcheongnam-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a pellicle of an EUV mask is provided. An insulation layer is formed over a silicon substrate, and a mesh is formed over the insulation layer. A frame exposing a rear surface of the insulation layer is formed by selectively removing a center portion of a rear surface of the silicon substrate. A membrane layer is deposited over the mesh and an exposed top surface of the insulation layer which is adjacent to the mesh. A rear surface of the membrane layer is exposed by selectively removing the portion of the insulation layer which is exposed by the frame.