The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2013

Filed:

Aug. 22, 2012
Applicants:

Yasushi Noguchi, Nagoya, JP;

Atsushi Kaneda, Ichinomiya, JP;

Takayuki Inoue, Nagoya, JP;

Inventors:

Yasushi Noguchi, Nagoya, JP;

Atsushi Kaneda, Ichinomiya, JP;

Takayuki Inoue, Nagoya, JP;

Assignee:

NGK Insulators, Ltd., Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01D 39/14 (2006.01); B01D 39/06 (2006.01); B01D 24/00 (2006.01); B01D 50/00 (2006.01); F01N 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The honeycomb structure is provided with a honeycomb structural section, a pair of lateral electrodes on the side face of the honeycomb structural section, and at least one intermediate layer between the honeycomb structural section and the lateral electrodes. The honeycomb structural section has silicon carbide particles having an average particle diameter of 3 to 40 μm and silicon, and the ratio (Si/SiC) of silicon (Si) to silicon carbide (SiC) is 10/90 to 40/60. The lateral electrodes have an average particle diameter of the silicon carbide particles of 10 to 70 μm and a Si/SiC ratio of 20/80 to 50/50. The intermediate layer has an average particle diameter of silicon carbide particles and Si/SiC between those of the honeycomb structural section and those of the lateral electrodes. The electric resistance between the lateral electrodes of the honeycomb structural section is 2 to 100Ω.


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