The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Apr. 05, 2011
Kuo Kuei Fu, Guishan Township, TW;
Yi Nan Chen, Taipei, TW;
Hsien Wen Liu, Luzhu Township, TW;
Nanya Technology Corporation, Kueishan, Tao-Yuan Hsien, TW;
Abstract
A model of defining a photoresist pattern collapse rule is provided. A portion of the photoresist pattern which corresponds to a second line pattern of a photomask layout is defined as non-collapse patterns if d≧5a and c≧1.5b or if 5a>d≧3a and c≧1.2b, wherein b is the widths of two first line patterns, c is the width of a second line pattern of the photomask layout, and a and d are distances between the second line pattern and the two first line patterns. Accordingly, a photomask layout, a semiconductor substrate and a method for improving photoresist pattern collapse for post-optical proximity correction are also provided.