The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8531887 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 10, 2013

Filed:

Jan. 03, 2012
Applicants:

Jung-no Im, Gunpo-si, KR;

Jae-woo Park, Suwon-si, KR;

Inventors:

Jung-no Im, Gunpo-si, KR;

Jae-woo Park, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory device programs a memory cell by performing a plurality of program loops each comprising a program operation and a program verifying operation. Where the program verifying operation in one program loop determines that the memory cell has been successfully programmed to a target state, a soft-programming operation is performed in a subsequent program loop to determine whether the memory cell has retained the target state, and if not, increases the threshold voltage of the memory cell.


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Im, Jung-no. (2013). Nonvolatile memory device and related programming method (U.S. Patent No. 8531887). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8531887

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