The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Jun. 15, 2011
Ken Shono, Yokohama, JP;
Ken Shono, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A semiconductor device includes a high-side field-effect transistor including a high-side drain electrode, a high-side gate electrode, and a high-side source electrode; and a first low-side field-effect transistor including a first low-side drain electrode, a first low-side gate electrode and a first low-side source electrode, wherein the high-side source electrode and the first low-side drain electrode are shared as a single source and drain electrode, and the high-side drain electrode, the high-side gate electrode, the source and drain electrode, the first low-side gate electrode and the first low-side source electrode are arranged in this order while being interposed by gaps, respectively.