The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8530956 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 10, 2013

Filed:

Oct. 20, 2011
Applicant:

Sang-bum Lee, Gyeonggi-do, KR;

Inventor:

Sang-Bum Lee, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory device including a memory string including a plurality of memory cells coupled in series. The non-volatile memory device includes the memory string including a first semiconductor layer and a second conductive layer with a memory gate insulation layer therebetween, a first selection transistor comprising a second semiconductor layer coupled with one end of the first semiconductor layer, a second selection transistor comprising a third semiconductor layer coupled with the other end of the first semiconductor layer, and a fourth semiconductor layer contacting the first semiconductor layer in a region where the second conductive layer is not disposed.


Find Patent Forward Citations

Lee, Sang-Bum. (2013). Non-volatile memory device and method for fabricating the same (U.S. Patent No. 8530956). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8530956

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…