The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Jun. 23, 2010
Yasushi Kondo, Kyoto, JP;
Hideki Tominaga, Uji, JP;
Kenji Takubo, Uji, JP;
Ryuta Hirose, Kizugawa, JP;
Shigetoshi Sugawa, Sendai, JP;
Hideki Mutoh, Odawara, JP;
Yasushi Kondo, Kyoto, JP;
Hideki Tominaga, Uji, JP;
Kenji Takubo, Uji, JP;
Ryuta Hirose, Kizugawa, JP;
Shigetoshi Sugawa, Sendai, JP;
Hideki Mutoh, Odawara, JP;
Shimadzu Corporation, Kyoto, JP;
Tohoku University, Miyagi, JP;
Abstract
A floating diffusion region is formed at an edge of a light-receiving surface of an embedded photodiode, with a transfer gate electrode located therebetween. A first region, with radially extending portions centered on the FD region, and a second region, located to the outside of the first region, are created in the substantially sector-shaped light-receiving surface. A dopant whose conductivity type is the same as the signal charges to be collected in the first region are introduced, whereby an electric field for moving the signal charges from the radially extending sections towards the center is created due to a three-dimensional field effect. As a result, the charge-transfer time is reduced. Additionally, since a circuit element in the subsequent stage can be placed adjacent to the floating diffusion region, the parasitic capacitance of the floating diffusion region can be reduced and a highly sensitive element can be obtained.