The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8530942 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 10, 2013

Filed:

Mar. 17, 2011
Applicant:

Tsubasa Yamada, Kanagawa-ken, JP;

Inventor:

Tsubasa Yamada, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a semiconductor device, including a semiconductor layer including a first region and a second region isolated from the first region, a source in a surface of the first region, a drain in a surface of the second region, a back-gate in the surface of the first region, an end of a drain side of the back-gate being located closer to the drain side than an end of the drain side of the source, a gate insulator on a surface of the semiconductor layer between the first region and the second region, a gate electrode on the gate insulator, a source electrode being contacted to both the source and the back-gate, and a drain electrode being contacted to the drain area.


Find Patent Forward Citations

Yamada, Tsubasa. (2013). Semiconductor device and method of fabricating the same (U.S. Patent No. 8530942). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8530942

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