The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Aug. 31, 2011
Applicants:
Daniel Piper, Vancouver, WA (US);
Franklin Chiang, Vancouver, WA (US);
Ganesh Yerubandi, Vancouver, WA (US);
Inventors:
Daniel Piper, Vancouver, WA (US);
Franklin Chiang, Vancouver, WA (US);
Ganesh Yerubandi, Vancouver, WA (US);
Assignee:
Wafertech, LLC, Camas, WA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A shallow trench isolation (STI) structure and methods for forming the same provide an STI structure with a top surface formed completely of silicon nitride. The methods for forming the STI structures provide for at least one nitride deposition step followed by a further nitride deposition step to re-fill divots that occur along the upper portions of the trench sidewalls.