The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Dec. 31, 2009
Applicants:
Taiji Ema, Kawasaki, JP;
Hideyuki Kojima, Kawasaki, JP;
Toru Anezaki, Kawasaki, JP;
Inventors:
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
An integrated circuit device comprises a memory cell well formed with a flash memory device, first and second well of opposite conductivity types for formation of high voltage transistors, and third and fourth wells of opposite conductivity types for low voltage transistors, wherein at least one of the first and second wells and at least one of the third and fourth wells have an impurity distribution profile steeper than the memory cell well.
Ema, Taiji. (2013). Semiconductor integrated circuit device having improved punch-through resistance and production method thereof, semiconductor integrated circuit device including a low-voltage transistor and a high-voltage transistor (U.S. Patent No. 8530308). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8530308
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile