The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
May. 21, 2010
Applicants:
Naochika Horio, Tokyo, JP;
Masayuki Makishima, Tokyo, JP;
Inventors:
Naochika Horio, Tokyo, JP;
Masayuki Makishima, Tokyo, JP;
Assignee:
Stanley Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method which has a step of growing a thermostable-state ZnO-based single crystal on a ZnO single crystal substrate at a growth temperature that is equal to or greater than 600° C. and less than 900° C. by using a metalorganic compound containing no oxygen and water vapor based on an MOCVD method.
Horio, Naochika. (2013). Method for growing zinc-oxide-based semiconductor device and method for manufacturing semiconductor light emitting device (U.S. Patent No. 8530272). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8530272
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile