The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8530271 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 10, 2013

Filed:

Jan. 21, 2011
Applicants:

Ajay Virkar, Stanford, CA (US);

Melburne C. Lemieux, La Honda, CA (US);

Zhenan Bao, Stanford, CA (US);

Inventors:

Ajay Virkar, Stanford, CA (US);

Melburne C. Lemieux, La Honda, CA (US);

Zhenan Bao, Stanford, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposited from solution or by vapor deposition, and used to dope the nanotubes to increase the thermal and/or electrical conductivity of the nanotubes.


Find Patent Forward Citations

Virkar, Ajay. (2013). Fullerene-doped nanostructures and methods therefor (U.S. Patent No. 8530271). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8530271

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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