The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
May. 11, 2009
Masato Ofuji, Honjo, JP;
Yasuyoshi Takai, Kawasaki, JP;
Takehiko Kawasaki, Kamakura, JP;
Norio Kaneko, Atsugi, JP;
Ryo Hayashi, Yokohama, JP;
Masato Ofuji, Honjo, JP;
Yasuyoshi Takai, Kawasaki, JP;
Takehiko Kawasaki, Kamakura, JP;
Norio Kaneko, Atsugi, JP;
Ryo Hayashi, Yokohama, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method for controlling the threshold voltage of a semiconductor element having at least a semiconductor as a component is characterized in including a process to measure one of a threshold voltage and a characteristic value serving as an index for the threshold voltage; a process to determine one of the irradiation intensity, irradiation time, and wavelength of the light for irradiating the semiconductor based on one of the measured threshold voltage and the measured characteristic value serving as the index for the threshold voltage; and a process to irradiate light whose one of the irradiation intensity, irradiation time, and wavelength has been determined onto the semiconductor; wherein the light irradiating the semiconductor is a light having a longer wavelength than the wavelength of the absorption edge of the semiconductor, and the threshold voltage is changed by the irradiation of the light.