The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Dec. 03, 2010
Sang-hyon Chu, Newport News, VA (US);
Sang H. Choi, Poquoson, VA (US);
Jae-woo Kim, Newport News, VA (US);
Yeonjoon Park, Yorktown, VA (US);
James R. Elliott, Vesuvius, VA (US);
Glen C. King, Yorktown, VA (US);
Diane M. Stoakley, Ashland, VA (US);
Sang-Hyon Chu, Newport News, VA (US);
Sang H. Choi, Poquoson, VA (US);
Jae-Woo Kim, Newport News, VA (US);
Yeonjoon Park, Yorktown, VA (US);
James R. Elliott, Vesuvius, VA (US);
Glen C. King, Yorktown, VA (US);
Diane M. Stoakley, Ashland, VA (US);
National Institute of Aerospace Associates, Hampton, VA (US);
The United States of America as represented by the Administration of NASA, Washington, DC (US);
Abstract
A new fabrication method for nanovoids-imbedded bismuth telluride (Bi—Te) material with low dimensional (quantum-dots, quantum-wires, or quantum-wells) structure was conceived during the development of advanced thermoelectric (TE) materials. Bismuth telluride is currently the best-known candidate material for solid-state TE cooling devices because it possesses the highest TE figure of merit at room temperature. The innovative process described here allows nanometer-scale voids to be incorporated in Bi—Te material. The final nanovoid structure such as void size, size distribution, void location, etc. can be also controlled under various process conditions.