The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Feb. 12, 2010
Jong-baek Seon, Yongin-si, KR;
Sang-yoon Lee, Seoul, KR;
Jeong-il Park, Seongnam-si, KR;
Myung-kwan Ryu, Yongin-si, KR;
Kyung-bae Park, Seoul, KR;
Jong-Baek Seon, Yongin-si, KR;
Sang-Yoon Lee, Seoul, KR;
Jeong-il Park, Seongnam-si, KR;
Myung-Kwan Ryu, Yongin-si, KR;
Kyung-Bae Park, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.