The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Aug. 28, 2009
Tetsuji Imamura, Toyama, JP;
Daisuke Kuwahara, Toyama, JP;
Takayuki Nakano, Toyama, JP;
Takahiro Ishibashi, Toyama, JP;
Tetsuji Imamura, Toyama, JP;
Daisuke Kuwahara, Toyama, JP;
Takayuki Nakano, Toyama, JP;
Takahiro Ishibashi, Toyama, JP;
Hokuriku Electric Industry Co., Ltd., Toyama-Shi, JP;
Abstract
Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis stepof synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment stepof adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation stepof preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying stepof purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying stepof freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.