The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Sep. 16, 2009
Applicants:
Naochika Horio, Tokyo, JP;
Masayuki Makishima, Tokyo, JP;
Inventors:
Naochika Horio, Tokyo, JP;
Masayuki Makishima, Tokyo, JP;
Assignee:
Stanley Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/00 (2006.01); C30B 25/00 (2006.01); C30B 28/12 (2006.01); C30B 28/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method includes the steps of, using water vapor and a metalorganic compound not containing oxygen, (a) performing crystal growth at a low growth temperature and at a low growth pressure in the range of 1 kPa to 30 kPa to form a low-temperature grown single-crystal layer; and (b) performing crystal growth at a high growth temperature and at a pressure higher than the low growth pressure to form a high-temperature grown single-crystal layer on the low-temperature grown single-crystal layer.