The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2013
Filed:
Aug. 31, 2005
Hideki Hashimoto, Wako, JP;
Akihiko Horiuchi, Wako, JP;
Hideo Kawanishi, Hachioji, JP;
Honda Motor Co., Ltd., Tokyo, JP;
Other;
Abstract
A process for growing a crystal of a nitride semiconductor in which after the step of mounting a substrate () in a reaction tube (), the step of feeding a first material gas containing a Group 3 element onto the substrate in the reaction tube and the step of feeding a second material gas containing elemental nitrogen onto the substrate in the reaction tube are carried out alternately to deposit a nitride semiconductor crystal directly on the substrate. The number of moles of the elemental nitrogen contained in the second material gas has a ratio of 200 or more to the number of moles of the Group 3 element in the first material gas.