The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Apr. 30, 2008
Ludovic Goux, Hannut, BE;
Judit G. Lisoni Reyes, Oud-Heverlee, BE;
Thomas Gille, Leuven, BE;
Dirk J. C. C. M. Wouters, Heverlee, BE;
Ludovic Goux, Hannut, BE;
Judit G. Lisoni Reyes, Oud-Heverlee, BE;
Thomas Gille, Leuven, BE;
Dirk J. C. C. M. Wouters, Heverlee, BE;
NXP B.V., Eindhoven, NL;
Abstract
A memory device comprises an array of memory cells for storing data and a voltage application unit for applying voltages to the cells for writing data to the cells. Each memory cell has a first layer comprising copper in contact with a second layer comprising a chalcogenide material. The voltage application unit is arranged to write data by switching each cell between a first resistance state and a second, lower, resistance state. The voltage application unit is arranged to switch a cell to the first resistance state by applying a potential difference across the first and second layers such that the potential at the first layer is higher than the potential at the second layer by 0.5 volts or less. The voltage application unit is arranged to switch a cell to the second resistance state by applying a potential difference across the first and second layers such that the potential at the second layer is higher than the potential at the first layer by 0.5 volts or less. The current flow when switching between resistance states is less than 10 μA. The memory cells of the device can be toggled between the resistance states, and the resistance states are non-volatile.