The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Jun. 13, 2011
Hiroto Yamagiwa, Osaka, JP;
Shingo Hashizume, Kyoto, JP;
Manabu Yanagihara, Osaka, JP;
Ayanori Ikoshi, Kyoto, JP;
Hiroto Yamagiwa, Osaka, JP;
Shingo Hashizume, Kyoto, JP;
Manabu Yanagihara, Osaka, JP;
Ayanori Ikoshi, Kyoto, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semiconductor devicein a bi-directional switch includes: a first electrodeA, a second electrodeB, a first gate electrodeA, and a second gate electrodeB. In a transition period: when the potential of the first electrodeA is higher than the potential of the second electrodeB, a voltage lower than the first threshold voltage is applied to the first gate electrodeA and a voltage higher than the second threshold value voltage is applied to the second gate electrodeB; and otherwise, a voltage higher than the first threshold value voltage is applied to the first gate electrode, and a voltage lower than the second threshold value voltage is applied to the second gate electrode.