The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Aug. 20, 2010
Applicants:
Xavier Garros, Grenoble, FR;
Laurent Brunet, Grenoble, FR;
Inventors:
Xavier Garros, Grenoble, FR;
Laurent Brunet, Grenoble, FR;
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 27/26 (2006.01); G01R 29/12 (2006.01); G01R 31/12 (2006.01); G01R 25/00 (2006.01); G01N 27/60 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for evaluating the electric performances of an FDSOI transistor, including the steps of: measuring capacitance and/or conductance of the FDSOI transistor, by applying a voltage V>0 on a substrate composed of semiconductor of the FDSOI transistor when the FDSOI transistor is NMOS or a voltage V<0 on the substrate composed of semiconductor of the FDSOI transistor when the FDSOI transistor is PMOS, depending on a voltage Vapplied between a gate and source and drain regions of the FDSOI transistor.