The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2013

Filed:

Mar. 06, 2013
Applicants:

Lejun HU, Somerville, MA (US);

Srivatsan Parthasarathy, Burlington, MA (US);

Michael Coln, Lexington, MA (US);

Javier Salcedo, North Billerica, MA (US);

Inventors:

Lejun Hu, Somerville, MA (US);

Srivatsan Parthasarathy, Burlington, MA (US);

Michael Coln, Lexington, MA (US);

Javier Salcedo, North Billerica, MA (US);

Assignee:

Analog Devices, Inc., Norwood, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device formed on a substrate includes a first diode junction formation, a second diode junction formation, and at least one through-silicon-via (TSV), in which a cathode and an anode of the first diode are cross-connected to an anode and cathode of the second diode through the at least one TSV for achieving electrical robustness in through-silicon-via based integrated circuits, including photosensitive devices and circuits for signal processing applications.


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