The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2013

Filed:

Dec. 18, 2006
Applicants:

Robertus T. F. Van Schaijk, Eindhoven, NL;

Francois Neuilly, Colomby sur Thaon, FR;

Michiel J. Van Duuren, Valkenswaard, NL;

Inventors:

Robertus T. F. Van Schaijk, Eindhoven, NL;

Francois Neuilly, Colomby sur Thaon, FR;

Michiel J. Van Duuren, Valkenswaard, NL;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to certain embodiments, a non-volatile memory device on a semiconductor substrate having a semiconductor surface layer comprises a channel region that extends in a first direction between the source and drain regions. The gate is disposed near the channel region and the memory element is disposed in between the channel region and the gate. The channel region is disposed within a beam-shaped semiconductor layer, with the beam-shaped semiconductor layer extending in the first direction between the source and drain regions and having lateral surfaces extending parallel to the first direction. The memory element comprises a charge-trapping stack so as to embed therein the beam-shaped semiconductor layer in a U-shaped form.


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