The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Mar. 16, 2010
Yoshiko Kato, Yokohama, JP;
Hiroyuki Kutsukake, Yokohama, JP;
Kikuko Sugimae, Yokohama, JP;
Yasuhiko Matsunaga, Yokohama, JP;
Yoshiko Kato, Yokohama, JP;
Hiroyuki Kutsukake, Yokohama, JP;
Kikuko Sugimae, Yokohama, JP;
Yasuhiko Matsunaga, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A non-volatile semiconductor storage device includes: a semiconductor substrate; a semiconductor layer formed on the semiconductor substrate; a first device isolation/insulation film formed in a trench, the trench formed in the semiconductor layer, with a first direction taken as a longitudinal direction; a device formation region formed by separating the semiconductor layer by the first device isolation/insulation film with the first direction taken as a longitudinal direction; and a memory transistor disposed on the device formation region. The first device isolation/insulation film and the device formation region have an impurity of a first conductivity type. An impurity concentration of the impurity of the first conductivity type in the first device isolation/insulation film is higher than that in the device formation region.