The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Feb. 03, 2012
Nobuyoshi Saito, Kanagawa-ken, JP;
Tomomasa Ueda, Kanagawa-ken, JP;
Shintaro Nakano, Kanagawa-ken, JP;
Shuichi Uchikoga, Tokyo, JP;
Nobuyoshi Saito, Kanagawa-ken, JP;
Tomomasa Ueda, Kanagawa-ken, JP;
Shintaro Nakano, Kanagawa-ken, JP;
Shuichi Uchikoga, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.