The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Jul. 20, 2011
Applicant:
Eiichi Satoh, Osaka, JP;
Inventor:
Eiichi Satoh, Osaka, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A TFT includes a supporting substrate, a gate electrode formed on the supporting substrate, a gate insulation film formed on the substrate so as to cover the gate electrode, a first semiconductor layer formed across from the gate electrode with respect to the gate insulation film, a second semiconductor layer formed on the first semiconductor layer, and having a first thickness and a second thickness which is greater than the first thickness, an ohmic contact layer formed on the second semiconductor layer, and a source electrode and a drain electrode formed on the ohmic contact layer, spacing apart with each other.