The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Dec. 12, 2011
Applicants:
Fen Chen, Williston, VT (US);
Elbert E. Huang, Carmel, NY (US);
Michael A. Shinosky, Jericho, VT (US);
Inventors:
Fen Chen, Williston, VT (US);
Elbert E. Huang, Carmel, NY (US);
Michael A. Shinosky, Jericho, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
Aspects of the invention provide a semiconductor tunneling device including voltage controlled negative resistance. In one embodiment, the semiconductor tunneling device includes: at least one pair of spaced apart terminals; an inter-level dielectric (ILD) layer between the at least one pair of spaced apart terminals; and a dielectric capping layer extending continuously over the at least one pair of spaced apart terminals and the ILD layer.