The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2013
Filed:
Oct. 20, 2010
Min Ki Yoo, Gumi-si, KR;
Koo Hwa Lee, Gyeongbuk, KR;
Rok Hee Lee, Gyeongbuk, KR;
Geun Woo Lee, Goyang-si, KR;
Min Ki Yoo, Gumi-si, KR;
Koo Hwa Lee, Gyeongbuk, KR;
Rok Hee Lee, Gyeongbuk, KR;
Geun Woo Lee, Goyang-si, KR;
LG Display Co., Ltd., Seoul, KR;
Abstract
A semiconductor light emission device is disclosed. The semiconductor light emission device includes: a substrate; a current concentration preventing pattern formed in a mesh net shape on the substrate; an n-type clad layer formed on the substrate loaded with the current concentration preventing pattern; an active layer and a p-type clad layer sequentially formed on the n-type clad layer; an n-type electrode formed on a part of the n-type clad layer which is exposed by partially etching the p-type clad layer and active layer; and a p-type electrode formed on the p-type clad layer. The current concentration preventing pattern is formed in a double layer structure which includes a first layer formed from one material of SiO and SiN and on the substrate, and a second layer formed from a metal material and on the first layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile