The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2013

Filed:

Mar. 23, 2012
Applicants:

Shintaro Watanabe, Tokyo, JP;

Kazuhiro Iyomasa, Tokyo, JP;

Hiroaki Maehara, Tokyo, JP;

Jun Takaso, Tokyo, JP;

Inventors:

Shintaro Watanabe, Tokyo, JP;

Kazuhiro Iyomasa, Tokyo, JP;

Hiroaki Maehara, Tokyo, JP;

Jun Takaso, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/68 (2006.01);
U.S. Cl.
CPC ...
Abstract

A high frequency power amplifier includes: a first transistor for amplifying an input high-frequency signal; a second transistor for amplifying an output signal of the first transistor; a third transistor connected in parallel with the first transistor and for amplifying the input high-frequency signal; a first switching element connected between an output of the first transistor and an input of the second transistor; a second switching element connected between an output of the third transistor and the first switching element; third and fourth switching elements connected in series between the output of the first transistor and an output of the second transistor, and between the second switching element and the output of the second transistor; and a first capacitor connected between the third switching element and the fourth switching element.


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