The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Nov. 03, 2010
Yoshitaka Kubota, Kanagawa, JP;
Hiroshi Tsuda, Kanagawa, JP;
Kenichi Hidaka, Kanagawa, JP;
Takuji Onuma, Kanagawa, JP;
Hiromichi Takaoka, Kanagawa, JP;
Yoshitaka Kubota, Kanagawa, JP;
Hiroshi Tsuda, Kanagawa, JP;
Kenichi Hidaka, Kanagawa, JP;
Takuji Onuma, Kanagawa, JP;
Hiromichi Takaoka, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device has a conventional NMOS transistor and an NMOS transistor functioning as an anti-fuse element and having an n type channel region. The conventional NMOS transistor is equipped with an n type extension region and a p type pocket region, while the anti-fuse element is not equipped with an extension region and a pocket region. This makes it possible to improve the performance of the transistor and at the same time improve the characteristics of the anti-fuse element after breakdown of its gate dielectric film.