The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Apr. 21, 2009
Torsten Kramer, Wannweil, DE;
Marcus Ahles, Pfullingen, DE;
Armin Grundmann, Reutlingen, DE;
Kathrin Knese, Reutlingen, DE;
Hubert Benzel, Pliezhausen, DE;
Gregor Schuermann, Reutlingen, DE;
Simon Armbruster, Wannweil, DE;
Torsten Kramer, Wannweil, DE;
Marcus Ahles, Pfullingen, DE;
Armin Grundmann, Reutlingen, DE;
Kathrin Knese, Reutlingen, DE;
Hubert Benzel, Pliezhausen, DE;
Gregor Schuermann, Reutlingen, DE;
Simon Armbruster, Wannweil, DE;
Robert Bosch GmbH, Stuttgart, DE;
Abstract
A method for manufacturing a micromechanical diaphragm structure having access from the rear of the substrate includes: n-doping at least one contiguous lattice-type area of a p-doped silicon substrate surface; porously etching a substrate area beneath the n-doped lattice structure; producing a cavity in this substrate area beneath the n-doped lattice structure; growing a first monocrystalline silicon epitaxial layer on the n-doped lattice structure; at least one opening in the n-doped lattice structure being dimensioned in such a way that it is not closed by the growing first epitaxial layer but instead forms an access opening to the cavity; an oxide layer being created on the cavity wall; a rear access to the cavity being created, the oxide layer on the cavity wall acting as an etch stop layer; and the oxide layer being removed in the area of the cavity.