The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
May. 19, 2010
Applicant:
Naoyoshi Tamura, Yokohama, JP;
Inventor:
Naoyoshi Tamura, Yokohama, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 31/0312 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a MOS transistor, a source electrode and a drain electrode on the MOS transistor each include a first carbon doped silicon layer including carbon at a first carbon concentration and phosphorus at a first phosphorus concentration and a second carbon doped silicon layer over the first silicon carbide layer, which includes phosphorus at a second phosphorus concentration higher than the first phosphorus concentration, and which includes carbon at a second carbon concentration less than or equal to the first carbon concentration.