The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Sep. 29, 2011
Applicant:
Rajesh Kumar Malhan, Nagoya, JP;
Inventor:
Rajesh Kumar Malhan, Nagoya, JP;
Assignee:
DENSO CORPORATION, Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/812 (2006.01); H01L 21/337 (2006.01); H01L 29/768 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device with a JFET is disclosed. The semiconductor device includes a trench and a contact embedded layer formed in the trench. A gate wire is connected to the contact embedded layer, so that the gate wire is connected to an embedded gate layer via the contact embedded layer. In this configuration, it is possible to downsize a contact structure between the embedded gate layer and the gate wire.
Malhan, Rajesh. (2013). Semiconductor device with junction field-effect transistor and manufacturing method of the same (U.S. Patent No. 8519452). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8519452
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile