The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8519451 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 27, 2013

Filed:

Mar. 08, 2012
Applicant:

Osamu Takata, Kanagawa-ken, JP;

Inventor:

Osamu Takata, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a semiconductor device includes a source region having p-type conductivity, a drain region having p-type conductivity, a channel region provided between the source region and the drain region and having n-type conductivity, a lower gate insulating film provided on the channel region, a lower gate electrode provided on the lower gate insulating film, an upper gate insulating film provided on the lower gate electrode, an upper gate electrode provided on the upper gate insulating film, and a switching element connected between the lower gate electrode and the source region.


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Takata, Osamu. (2013). Semiconductor device (U.S. Patent No. 8519451). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8519451

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