The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Jul. 18, 2006
Jean-luc Pelouard, Paris, FR;
Melania Lijadi, Fontenay aux Roses, FR;
Christophe Dupuis, L'Hay les Roses, FR;
Fabrice Pardo, Vitry-sur-Seine, FR;
Philippe Bove, Gif-sur-Yvette, FR;
Jean-Luc Pelouard, Paris, FR;
Melania Lijadi, Fontenay aux Roses, FR;
Christophe Dupuis, L'Hay les Roses, FR;
Fabrice Pardo, Vitry-sur-Seine, FR;
Philippe Bove, Gif-sur-Yvette, FR;
Centre National de la Recherche Scientifique-CNRS, Paris, FR;
S.O.I. Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
The invention concerns a heterojunction bipolar transistor comprising a support, and epitaxially grown from said support, at least: one collecting, respectively emitting, layer; at least one base layer; and at least one emitting, respectively collecting, layer. The collecting, respectively emitting, layer comprises: at least one first undercoat contacted with said base layer, substantially of similar composition as said emitting, respectively collecting, layer; and at least one second undercoat on the side opposite said base layer relative to said first undercoat.