The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Oct. 03, 2011
Akio Iwabuchi, Niiza, JP;
Hironori Aoki, Niiza, JP;
Akio Iwabuchi, Niiza, JP;
Hironori Aoki, Niiza, JP;
Sanken Electric Co., Ltd., Niiza-shi, JP;
Abstract
A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a two-dimensional carrier gas layer, a first main electrode, a second main electrode, a first gate electrode, and a second gate electrode. The first gate electrode is provided between a part of the first main electrode and a part of the second main electrode opposite to the part of the first main electrode. The second gate electrode is provided between another part of the first main electrode and another part of the second main electrode opposite to the another part of the first main electrode with a separation region interposed between the first gate electrode and the second gate electrode. The second gate electrode is controlled independently of the first gate electrode.