The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Mar. 27, 2008
Jeffrey G. Barrow, Tucson, AZ (US);
Javier A. Salcedo, Lawrence, MA (US);
A. Paul Brokaw, Tucson, AZ (US);
Jeffrey G. Barrow, Tucson, AZ (US);
Javier A. Salcedo, Lawrence, MA (US);
A. Paul Brokaw, Tucson, AZ (US);
Analog Devices, Inc., Norwood, MA (US);
Abstract
A semiconductor switch comprises a PNPN structure arranged to provide an SCR-like functionality, and a MOS gate structure, preferably integrated on a common substrate. The switch includes ohmic contacts for the MOS gate, and for the cathode and gate regions of the PNPN structure; the anode contact is intrinsic. A fixed voltage is typically applied to an external node. The MOS gate structure allows current to be conducted between the external node and the intrinsic anode when on, and the PNPN structure conducts the current from the anode to the cathode when an appropriate voltage is applied to the gate contact. Regenerative feedback keeps the switch on once it begins to conduct. The MOS gate inhibits the flow of current between the external node and anode—and thereby turns off the switch—when off. When on, the MOS gate's channel resistance serves as a ballast resistor.