The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Jun. 27, 2011
Xiaoyu Yang, Union City, CA (US);
Xianzhong Zeng, Fremont, CA (US);
Yan Chen, Fremont, CA (US);
Yunhe Huang, Pleasanton, CA (US);
Jinqiu Zhang, Fremont, CA (US);
Yang Xiang, Fremont, CA (US);
Ching-huang LU, Fremont, CA (US);
Xiaoyu Yang, Union City, CA (US);
Xianzhong Zeng, Fremont, CA (US);
Yan Chen, Fremont, CA (US);
Yunhe Huang, Pleasanton, CA (US);
Jinqiu Zhang, Fremont, CA (US);
Yang Xiang, Fremont, CA (US);
Ching-Huang Lu, Fremont, CA (US);
Western Digital (Fremont), LLC, Fremont, CA (US);
Abstract
A process is provided for etching a mask layer and removal of residue from a structure having an area sheltered from directional etching. The structure has a shape that forms a silhouette area obstructed from being etched by anisotropic bombardment originating from a first direction, and a mask formed over the mask layer over the structure; A first etch process removes at least a part of the mask layer and retains at least a part of mask layer in the sheltered area. A second etch process removes at least a part of the mask layer in the sheltered area by hydrogen based microwave plasma etching.