The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Sep. 23, 2010
Applicant:
Eric Graetz, Krumpendorf, AT;
Inventor:
Eric Graetz, Krumpendorf, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract
One or more embodiments relate to a method for forming a semiconductor structure, including: forming a semiconductor layer; and forming a dielectric layer over a back side of said semiconductor layer. In one or more embodiments, the dielectric layer may be a silicone rubber layer.
Quick Actions:
Graetz, Eric. (2013). Semiconductor structure and method for making same (U.S. Patent No. 8518798). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8518798
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