The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Sep. 01, 2010
Applicants:
Hokyun Ahn, Daejeon, KR;
Jong-won Lim, Daejeon, KR;
Hyung Sup Yoon, Daejeon, KR;
Woojin Chang, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Inventors:
Hokyun Ahn, Daejeon, KR;
Jong-Won Lim, Daejeon, KR;
Hyung Sup Yoon, Daejeon, KR;
Woojin Chang, Daejeon, KR;
Hae Cheon Kim, Daejeon, KR;
Assignee:
Electronics and Telecommunications Research Institute, Daejeon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided is a semiconductor device. The semiconductor device includes: a substrate; an active layer on the substrate; a capping layer on the active layer; source/drain electrodes on the capping layer; a gate electrode on the active layer; and a first void region on a first sidewall of the gate electrode and a second void region on a second sidewall facing the first sidewall.