The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Oct. 17, 2012
Applicant:
Imec, Leuven, BE;
Inventors:
Assignee:
IMEC, Leuven, BE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a MIM capacitor structure includes the steps of obtaining a base structure provided with a recess, the recess exposing a conductive bottom electrode plug; selectively growing Ru on the bottom electrode plug, based on a difference in incubation time of Ru growth on the bottom electrode plug compared to the base structure material; oxidizing the selectively grown Ru; depositing a Ru-comprising bottom electrode over the oxidized Ru; forming a dielectric layer on the Ru-comprising bottom electrode; and—forming a conductive top electrode over the dielectric layer.