The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Jun. 28, 2012
Nestor A. Bojarczuk, Poughkeepsie, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Matthew W. Copel, Yorktown Heights, NY (US);
Supratik Guha, Chappaqua, NY (US);
Richard A. Haight, Mahopac, NY (US);
Vijay Narayanan, New York, NY (US);
Martin P. O'boyle, Cortlandt Manor, NY (US);
Vamsi K. Paruchuri, New York, NY (US);
Nestor A. Bojarczuk, Poughkeepsie, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Matthew W. Copel, Yorktown Heights, NY (US);
Supratik Guha, Chappaqua, NY (US);
Richard A. Haight, Mahopac, NY (US);
Vijay Narayanan, New York, NY (US);
Martin P. O'Boyle, Cortlandt Manor, NY (US);
Vamsi K. Paruchuri, New York, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A field effect transistor (FET) includes a body region and a source region disposed at least partially in the body region. The FET also includes a drain region disposed at least partially in the body region and a molybdenum oxynitride (MoNO) gate. The FET also includes a dielectric having a high dielectric constant (k) disposed between the body region and the MoNO gate.