The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2013

Filed:

Oct. 24, 2011
Applicants:

Thuy B. Dao, Austin, TX (US);

Joel E. Keys, Austin, TX (US);

Hernan A. Rueda, Chandler, AZ (US);

Paul W. Sanders, Scottsdale, AZ (US);

Inventors:

Thuy B. Dao, Austin, TX (US);

Joel E. Keys, Austin, TX (US);

Hernan A. Rueda, Chandler, AZ (US);

Paul W. Sanders, Scottsdale, AZ (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device structure includes a substrate having a background doping of a first concentration and of a first conductivity type. A through substrate via (TSV) is through the substrate. A device has a first doped region of a second conductivity on a first side of the substrate. A second doped region is around the TSV. The second doped region has a doping of a second concentration greater than the first concentration and is of the first conductivity type.


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