The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Apr. 06, 2012
Nobuhiko Umezu, Kanagawa, JP;
Koichi Tsukihara, Kanagawa, JP;
Goh Matsunobu, Kanagawa, JP;
Yoshio Inagaki, Kanagawa, JP;
Koichi Tatsuki, Kanagawa, JP;
Shin Hotta, Tokyo, JP;
Katsuya Shirai, Kanagawa, JP;
Nobuhiko Umezu, Kanagawa, JP;
Koichi Tsukihara, Kanagawa, JP;
Goh Matsunobu, Kanagawa, JP;
Yoshio Inagaki, Kanagawa, JP;
Koichi Tatsuki, Kanagawa, JP;
Shin Hotta, Tokyo, JP;
Katsuya Shirai, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction.