The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Dec. 27, 2010
Gao Zheng, San Jose, CA (US);
Hong Liubo, San Jose, CA (US);
Hsiao Richard, San Jose, CA (US);
Ju Kochan, Monte Sereno, CA (US);
Maat Stephen, San Jose, CA (US);
Gao Zheng, San Jose, CA (US);
Hong Liubo, San Jose, CA (US);
Hsiao Richard, San Jose, CA (US);
Ju Kochan, Monte Sereno, CA (US);
Maat Stephen, San Jose, CA (US);
HGST Netherlands B.V., Amsterdam, NL;
Abstract
The present invention provides a method for manufacturing a TMR sensor that reduces damage to a sensor stack during intermediate stages of the manufacturing process. In an embodiment of the invention, after formation of a sensor stack, a protective layer is deposited on the sensor stack that provides protection from materials that may be used in subsequent steps of the manufacturing process. The protective layer is subsequently converted to an insulating layer and the thickness of the insulating layer is extended to an appropriate thickness. In converting the protective layer to an insulating layer, the sensor stack is not directly exposed to materials that may damage it. For example, in an embodiment of the invention, Mg is used as the protective layer that is subsequently converted to MgO with the introduction of oxygen. Although direct contact of oxygen with the sensor stack may cause damage to the sensor stack, direct contact is avoided by the present invention. Subsequently, the thickness of the insulating layer, in this example can be extended to an appropriate thickness without exposing the sensor stack to damage causing oxygen and inter-diffusion.