The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
May. 24, 2011
Hee Seok Eun, Hwaseong-si, KR;
Hong Rak Son, Anyang-si, KR;
Jong Ha Kim, Seoul, KR;
Young June Kim, Seoul, KR;
Seong Hyeog Choi, Hwaseong-si, KR;
Hee Seok Eun, Hwaseong-si, KR;
Hong Rak Son, Anyang-si, KR;
Jong Ha Kim, Seoul, KR;
Young June Kim, Seoul, KR;
Seong Hyeog Choi, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of estimating a read level for a memory device includes calculating first information corresponding to at least one among information about the number of cells having a particular logic level in data to be programmed and information about the number of cells having a particular cell state and storing the first information during a program operation; reading the data based on a threshold level that has been set and calculating second information about the number of cells in at least one state defined by the threshold level with respect to the read data; calculating third information about the number of cells in the at least one state, which corresponds to the second information, using a probability based on the first information; comparing the second information with the third information; and determining whether to change the threshold level according to the comparison result.