The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Aug. 23, 2010
Yuji Masui, Kanagawa, JP;
Rintaro Koda, Tokyo, JP;
Tomoyuki Oki, Kanagawa, JP;
Takahiro Arakida, Kanagawa, JP;
Naoki Jogan, Kanagawa, JP;
Yoshinori Yamauchi, Tokyo, JP;
Yuji Masui, Kanagawa, JP;
Rintaro Koda, Tokyo, JP;
Tomoyuki Oki, Kanagawa, JP;
Takahiro Arakida, Kanagawa, JP;
Naoki Jogan, Kanagawa, JP;
Yoshinori Yamauchi, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.